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  july 2006 rev 5 1/12 12 STW30NM60D n-channel 600v - 0.125 ? - 30a - to-247 fast diode mdmesh? power mosfet general features high dv/dt and avalanche capabilities 100% avalanche rated low input capacitance and gate charge low gate input resistance fast internal recovery diode description the fdmesh? associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. it is therefore strongly recommended for bridge topologies, in particular zvs phase-shift converters. applications switching application internal schematic diagram type v dss r ds(on) i d STW30NM60D 600v < 0.145 ? 30a to-247 www.st.com order codes part number marking package packaging STW30NM60D w30nm60d to-247 tube obsolete product(s) - obsolete product(s)
contents STW30NM60D 2/12 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 obsolete product(s) - obsolete product(s)
STW30NM60D electrical ratings 3/12 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 600 v v dgr drain-gate voltage (r gs = 20k ? )600v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 30 a i d drain current (continuous) at t c = 100c 18.9 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 120 a p tot total dissipation at t c = 25c 312 w derating factor 2.5 w/c dv/dt (2) 2. i sd < 30a, di/dt < 400a/s, v dd = 80%v (br)dss peak diode recovery voltage slope 20 v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 2. thermal resistance symbol parameter value unit rthj-case thermal resistance junction-case max 0.4 c/w rthj-amb thermal resistance ju nction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 3. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 15 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) 740 mj obsolete product(s) - obsolete product(s)
electrical characteristics STW30NM60D 4/12 2 electrical characteristics (t case =25c unless otherwise specified) table 4. static symbol parameter test cond itions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, @125c 10 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250a 3 4 5 v r ds(on static drain-source on resistance v gs = 10v, i d = 15a 0.125 0.145 ? table 5. dynamic symbol parameter test conditions min typ. max. unit g fs (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5 % forward transconductance v ds = 15v , i d = 15a 16 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1mhz, v gs = 0 2520 800 75 pf pf pf c oss eq. (2) 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0v, v ds = 0 to 480v 390 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480v, i d = 30a, v gs = 10v figure 15 82 24 42 115 nc nc nc obsolete product(s) - obsolete product(s)
STW30NM60D electrical characteristics 5/12 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 300v, i d = 15a, r g = 4.7 ?, v gs = 10v figure 14 32 33 75 35 ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 30 120 a a v sd (2) 2. pulsed: pulse duration = 300s, duty cycle 1.5 % forward on voltage i sd = 30a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 30a, di/dt=100a/s v dd = 50v,tj=25c figure 17 165 1.1 14 ns nc a obsolete product(s) - obsolete product(s)
electrical characteristics STW30NM60D 6/12 2.1 electrical characteri stics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance obsolete product(s) - obsolete product(s)
STW30NM60D electrical characteristics 7/12 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics obsolete product(s) - obsolete product(s)
test circuit STW30NM60D 8/12 3 test circuit figure 12. unclamped inductive load test circuit figure 13. unclamped inductive wafeform figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. switching time waveform obsolete product(s) - obsolete product(s)
STW30NM60D package mechanical data 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com obsolete product(s) - obsolete product(s)
package mechanical data STW30NM60D 10/12 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data obsolete product(s) - obsolete product(s)
STW30NM60D revision history 11/12 5 revision history table 8. revision history date revision changes 24-june-2004 1 the document change from ?advanced? to ?complete?. new stylesheet. rds(on) max@10v changed. see ta b l e 4 . 06-dec-2005 2 inserted ecopack indication 20-dec-2005 3 modified value on source drain diode 24-jan-2006 4 changed unit on dynamic 13-jul-2006 5 new template, modified unit on source drain diode obsolete product(s) - obsolete product(s)
STW30NM60D 12/12 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com obsolete product(s) - obsolete product(s)


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